Beilstein J. Nanotechnol.2021,12, 566–577, doi:10.3762/bjnano.12.47
depends on graphene carrier concentration is the FWHM of the G band [15]. The phononlifetime is short in the case of a low value of the Fermi energy. Thus, the band width following the uncertainty principle consequently becomes larger. Increasing the Fermi energy values leads to an increase of the phonon
lifetime and consequently to a decrease of the band width. In general, FWHM of the G band is positively correlated with the value of graphene strain. However, in the case of graphene with strain smaller than 0.2%, which is the case in our samples, such changes of FWHM are negligible [45].
The histograms of
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Figure 1:
SEM images of graphene on GaN NWs with different variations in height in N0 (a,d), N100 (b,e), and ...
Beilstein J. Nanotechnol.2020,11, 782–797, doi:10.3762/bjnano.11.63
. From this analysis, phononlifetime in the Raman active modes and phonon concentration, as correlated to the energy parameter E0, were calculated as a function of the laser power, P, and substrate temperature, T. For monolayer WSe2, from the power dependence it was determined that the phononlifetime
for the in-plane vibrational mode was twice that of the out-of-plane vibrational mode for P in the range from 0.308 mW up to 3.35 mW. On the other hand, the corresponding relationship for the temperature analysis showed that the phononlifetime for the in-plane vibrational mode lies within 1.42× to
with increasing T and P; consequently, the phononlifetime was found to decrease. Although phononlifetime decreased with increasing temperature for all thicknesses, the decay rate in the phononlifetime in the monolayer (1L) material was found to be 2× lower compared to the bulk. We invoke a harmonic
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Figure 1:
(a) Optical image of monolayer (1L), multilayer (ML), and bulk WSe2 nanomembranes. Raman and PL mea...